CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness
نویسندگان
چکیده
منابع مشابه
Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor
Molybdenum disulfide (MoS2) has attracted a great attention as an excellent 2D material for future optoelectronic devices. Here, a novel MoS2 tribotronic phototransistor is developed by a conjunction of a MoS2 phototransistor and a triboelectric nanogenerator (TENG) in sliding mode. When an external friction layer produces a relative sliding on the device, the induced positive charges on the ba...
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Organic lead halide perovskites have received a huge amount of interest since emergence, because of tremendous potential applications in optoelectronic devices. Here field effect phototransistors (FEpTs) based on CH3NH3PbI3 perovskite/PbSe colloidal quantum dot heterostructure are demonstrated. The high light absorption and optoelectric conversion efficiency, due to the combination of perovskit...
متن کاملNonclassical Radiation from a Single Quantum Dot
We report the experimental observation of photon antibunching in the photoluminescence of a chemically synthesized CdSe/ZnS quantum dot (QD) at room temperature and from a single selfassembled InAs/GaAs QD at 4 K. These results prove that a single quantum dot acts like an artificial atom, with a discrete anharmonic spectrum. Using the quantum regression theorem, we find that the normalized seco...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2019
ISSN: 2045-2322
DOI: 10.1038/s41598-018-37902-y